▎ 摘　　要

Tin monosulfide, also known as SnS, is a significant IV-VI group semiconductor that has acquired considerable emphasis owing to its good absorption in visible range. In the present work, nanostructured thin films of pure SnS, Fe2O3, and Fe2O3/SnS heterojunction were synthesized using cost effective thermal evaporation and Rf sputtering method, respectively. Furthermore, to enhance the sample's photoelectrochemical activity, a homogenous thin film of graphene oxide (GO) is coated on Fe2O3/SnS heterojunction sample. All samples were well characterized and their photoelectrochemical response was investigated. The maximum photocurrent density was observed for Fe2O3/SnS/GO heterojunction i.e. 1.0 mA/cm2 which is much higher than pure SnS (0.3 mA/cm2) and Fe2O3 (0.02 mA/cm2) at 0.95 V vs. Ag/AgCl. The role of graphene layer is being examined for the improved photo-response. Remarkable photoresponse and stability of the Fe2O3/SnS/GO heterojunction sample may be attributed to better charge separation at the interfacial junction of SnS and Fe2O3 and excellent electron density of GO layer.