• 文献标题:   Epitaxial graphene: A new electronic material for the 21st century
  • 文献类型:   Article
  • 作  者:   DE HEER WA
  • 作者关键词:  
  • 出版物名称:   MRS BULLETIN
  • ISSN:   0883-7694 EI 1938-1425
  • 通讯作者地址:   Georgia Inst Technol
  • 被引频次:   14
  • DOI:   10.1557/mrs.2011.158
  • 出版年:   2011

▎ 摘  要

Graphene has been known for a long time, but only recently has its potential for electronics been recognized. Its history is recalled starting from early graphene studies. A critical insight in June 2001 brought to light that graphene could be used for electronics. This was followed by a series of proposals and measurements cumulating in a comprehensive patent for graphene-based electronics filed in 2003. The Georgia Institute of Technology (GIT) graphene electronics research project group selected epitaxial graphene as the most viable route for graphene-based electronics, as described in their 2004 paper on transport and structural measurements of epitaxial graphene. Subsequently, the field developed rapidly, and multilayer graphene was discovered at GIT. This material consists of many graphene layers, but it is not graphite; in contrast to graphite, the layers are rotated with respect to each other, causing electronic decoupling so that each layer has the electronic structure of graphene. Currently, the field has developed to the point where epitaxial graphene-based electronics may be realized in the not too distant future.