• 文献标题:   Enhanced Performance in Epitaxial Graphene FETs With Optimized Channel Morphology
  • 文献类型:   Article
  • 作  者:   LIN YM, FARMER DB, JENKINS KA, WU YQ, TEDESCO JL, MYERSWARD RL, EDDY CR, GASKILL DK, DIMITRAKOPOULOS C, AVOURIS P
  • 作者关键词:   fieldeffect transistor fet, graphene, radiofrequency rf
  • 出版物名称:   IEEE ELECTRON DEVICE LETTERS
  • ISSN:   0741-3106 EI 1558-0563
  • 通讯作者地址:   IBM Corp
  • 被引频次:   67
  • DOI:   10.1109/LED.2011.2162934
  • 出版年:   2011

▎ 摘  要

This letter reports the impact of surface morphology on the carrier transport and radio-frequency performance of graphene FETs formed on epitaxial graphene synthesized on SiC substrates. Such graphene exhibits long terrace structures with widths between 3-5 mu m and steps of 10 +/- 2 nm in height. While a carrier mobility value above 3000 cm(2)/V . s at a carrier density of 10(12) cm(-2) is obtained in a single graphene terrace, the step edges can result in a step resistance of similar to 21 k Omega . mu m. By orienting the transistor layout so that the entire channel lies within a single graphene terrace and by reducing the access resistance associated with the ungated part of the channel, a cutoff frequency above 200 GHz is achieved for graphene FETs with channel lengths of 210 nm, i.e., the highest value reported on epitaxial graphene thus far.