• 文献标题:   Investigating the potential of ammonium retention by graphene oxide ceramic nanofiltration membranes for the treatment of semiconductor wastewater
  • 文献类型:   Article
  • 作  者:   CHA M, BOO C, SONG IH, PARK C
  • 作者关键词:   ammonium removal, ceramic nanofiltration membrane, graphene oxide, layerbylayer assembly, low fouling potential, semiconductor wastewater
  • 出版物名称:   CHEMOSPHERE
  • ISSN:   0045-6535 EI 1879-1298
  • 通讯作者地址:  
  • 被引频次:   14
  • DOI:   10.1016/j.chemosphere.2021.131745 EA AUG 2021
  • 出版年:   2022

▎ 摘  要

Ceramic membranes with high chemical and fouling resistance can play a critical role in treating industrial wastewater. In the present study, we demonstrate the fabrication of graphene oxide (GO) assembled ceramic nanofiltration (NF) membranes that provide effective ammonium retention and excellent fouling resistance for treating semiconductor wastewater. The GO-ceramic NF membranes were prepared via a layer-by-layer (LbL) assembly of GO and polyethyleneimine (PEI) on a ceramic ultrafiltration (UF) substrate. The successful fabrication of the GO-ceramic NF membranes was verified through surface characterization and pore size evaluation. We also investigated the performance of GO-ceramic NF membranes assembled with different numbers of bilayers for the rejection of ammonium ions. GO-ceramic NF membranes with three GO-PEI bilayers exhibited 8.4-and 3.2-times higher ammonium removal with simulated and real semiconductor wastewater, respectively, compared to the pristine ceramic UF substrate. We also assessed flux recovery after filtration using real semiconductor wastewater samples to validate the lower fouling potential of the GO-ceramic NF membranes. Results indicate that flux recovery increases from 39.1 % in the pristine UF substrate to 71.0 % and 90.8 % for the three-and ten-bilayers GO-ceramic NF membranes, respectively. The low-fouling GO-ceramic NF membranes developed in this study are effective and promising options for the removal of ammonium ions from semiconductor wastewater.