▎ 摘　　要

Graphene is a two-dimensional material with a high surface to volume ratio and the fabrication process of graphene field effect transistors always introduces unintended contaminates like photoresidues on the surface of graphene. These contaminations are difficult to remove by conventional acetone solvent and suppress the intrinsic properties of graphene. To address the problem, a wet-chemical approach employing N,N-Dimethylacetamide (C4H9NO) was developed in this study, which shows an increase of the carrier mobility and a reduction of minimum conductance point in our devices. Raman spectroscopy and atomic force microscope were carried out to verify the cleaning effect of the approach. Our method provides a simple and effective way to enhance the electrical performance of graphene field effect transistors and can be readily integrated into the CMOS fabrication pilot line.