▎ 摘　　要

Direct growth of graphene nanostructures by using concepts of self-assembly and intercalation without further lithography and transfer processes is beneficial for their integration into device applications. In this letter, we report on bilayer graphene nanoribbons, typically 100 nm in width, grown along step edges of SiC(0001) substrates. The ribbons are electrically decoupled from the substrate by an oxygen treatment. By means of a 4-tip STM system, the microscopic structure and transport properties were comprehensively studied. The ribbons reveal a robust hole concentration of around 1 x 10(13) cm(-2) and mobilities up to 700 cm(2)/Vs at room temperature. The comparably high mobilities are a consequence of interlayer hopping of the charge carriers. The transport is not limited by the step roughness; thus, this scalable process can be easily extended to arbitrarily shaped structures. Published by AIP Publishing.