• 文献标题:   Reversible hydrogenation restores defected graphene to graphene
  • 文献类型:   Article
  • 作  者:   JIANG L, VAN DEURSEN PMG, ARJMANDITASH H, BELYAEVA LA, QI HY, HE J, KOFMAN V, WU LF, MURAVEV V, KAISER U, LINNARTZ H, HENSEN EJM, HOFMANN JP, SCHNEIDER GF
  • 作者关键词:   graphene, reversible hydrogenation, surface cleannes, in situ spectroscopy, transistor
  • 出版物名称:   SCIENCE CHINACHEMISTRY
  • ISSN:   1674-7291 EI 1869-1870
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1007/s11426-020-9959-5 EA APR 2021
  • 出版年:   2021

▎ 摘  要

Graphene as a two-dimensional material is prone to hydrocarbon contaminations, which can significantly alter its intrinsic electrical properties. Herein, we implement a facile hydrogenation-dehydrogenation strategy to remove hydrocarbon contaminations and preserve the excellent transport properties of monolayer graphene. Using electron microscopy we quantitatively characterized the improved cleanness of hydrogenated graphene compared to untreated samples. In situ spectroscopic investigations revealed that the hydrogenation treatment promoted the adsorption ofytyt water at the graphene surface, resulting in a protective layer against the re-deposition of hydrocarbon molecules. Additionally, the further dehydrogenation of hydrogenated graphene rendered a more pristine-like basal plane with improved carrier mobility compared to untreated pristine graphene. Our findings provide a practical post-growth cleaning protocol for graphene with maintained surface cleanness and lattice integrity to systematically carry a range of surface chemistry in the form of a well-performing and reproducible transistor.