▎ 摘　　要

A high performance vertical solar-blind ultraviolet photodetector based on beta-Ga2O3 thin films sandwiched between two graphene sheets has been fabricated by laser molecular beam epitaxy. The photodetector exhibits obvious rectifying characteristics and excellent solar-blind UV photoresponse. The fast rising and decay time of our detector are 0.96 s and 0.81 s under 254 nm illumination. The ratio of I-254/I-dark is up to 82.88 and the responsivity of graphene/beta-Ga2O3/graphene photodetector increases to 9.66 A/W at 10 V bias. Our results suggest that this performance is attributed to the existence of Schottky barriers between beta-Ga2O3 and two graphene sheets. The combination of Ga2O3 and graphene might open up new possibilities for future UV integrated optoelectronic devices. (C) 2016 Elsevier B.V. All rights reserved.