• 文献标题:   Direct measurement of graphene adhesion on silicon surface by intercalation of nanoparticles
  • 文献类型:   Article
  • 作  者:   ZONG Z, CHEN CL, DOKMECI MR, WAN KT
  • 作者关键词:   adhesion, elemental semiconductor, graphene, multilayer, nanoparticle, scanning electron microscopy, silicon
  • 出版物名称:   JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-8979 EI 1089-7550
  • 通讯作者地址:   334 Snell Engn Ctr
  • 被引频次:   116
  • DOI:   10.1063/1.3294960
  • 出版年:   2010

▎ 摘  要

We report a technique to characterize adhesion of monolayered/multilayered graphene sheets on silicon wafer. Nanoparticles trapped at graphene-silicon interface act as point wedges to support axisymmetric blisters. Local adhesion strength is found by measuring the particle height and blister radius using a scanning electron microscope. Adhesion energy of the typical graphene-silicon interface is measured to be 151 +/- 28 mJ/m(2). The proposed method and our measurements provide insights in fabrication and reliability of microelectromechanical/nanoelectromechanical systems.