• 文献标题:   Strongly Hole-Doped and Highly Decoupled Graphene on Platinum by Water Intercalation
  • 文献类型:   Article
  • 作  者:   LI Z, LI SQ, CHEN HYT, GAO N, SCHOUTEDEN K, QIANG XM, ZHAO JJ, BREMS S, HUYGHEBAERT C, VAN HAESENDONCKLI C
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY LETTERS
  • ISSN:   1948-7185
  • 通讯作者地址:   Harbin Inst Technol Shenzhen
  • 被引频次:   1
  • DOI:   10.1021/acs.jpclett.9b01488
  • 出版年:   2019

▎ 摘  要

Scanning tunneling microscopy and spectroscopy experiments under ultrahigh vacuum and low-temperature conditions have been performed on water-intercalated graphene on Pt(111). We find that the confined water layer, with a thickness around 0.35 nm, induces a strong hole doping in graphene, i.e., the Dirac point locates at round 0.64 eV above the Fermi level. This can be explained by the presence of a single "puckered bilayer" of ice-Ih, which has not been experimentally found on bare Pt(111), being confined in between graphene and Pt(111) surface. Moreover, the water intercalation makes graphene highly decoupled from the substrate, allowing us to reveal the intrinsic graphene phonons and double Rydberg series of even and odd symmetry image-potential states. Our work not only demonstrates that the electronic properties of graphene can be tuned by the confined water layer between graphene and the substrate, but also provides a generally applicable method to study the intrinsic properties of graphene as well as of other supported two-dimensional materials.