▎ 摘　　要

Graphene has been introduced to the electronics community as a potentially useful material for scaling electronic devices to meet low-power and high-performance targets set by the semiconductor industry international road-map, radio-frequency (RF) devices, and many more applications. Growth and integration of graphene for any device is challenging and will require significant effort and innovation to address the many issues associated with integrating the monolayer, chemically inert surface with metals and dielectrics. In this paper, we review the growth and integration of graphene for simple field-effect transistors and present physical and electrical data on the integrated graphene with metals and dielectrics.