▎ 摘　　要

We propose a graphene oxide (GO)/Pr0.7Ca0.3MnO3 (PCMO) based resistance random access memory (RRAM) device. Both active layers were prepared by a sol-gel spin-coating method at low temperature (<300 degrees C). The fabricated Pt/GO/PCMO/Pt RRAM device shows good switching performance with an on/off ratio of about 100 and a retention property of more than 10(4) at 85 degrees C and reliable endurance characteristics. Moreover, the observed bipolar switching phenomena could be explained by the movement of oxygen ions across the GO-PCMO interface. These results suggest that the GO/PCMO device is a good candidate for use in resistive memory applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3617426]