▎ 摘　　要

Removal of residues from CVD-grown graphene and its doping are key issues to fully explore its properties. In the present work, we propose a two-step process to remove PMMA residuals from graphene's surface and to incorporate dopants in its lattice by NO annealing. Nevertheless, NO thermal treatments also promoted etching of the graphene layer. This effect was shown to be induced by the decomposition products of NO, which are strong oxidizing agents like NO2. However, this undesirable side effect of NO annealing can be strongly suppressed by carefully choosing the annealing conditions, constituting a promising approach to dope graphene.