▎ 摘　　要

Few-layer graphene/silicon quantum dots/silicon (FLG/SiQDs/Si) heterojunction solar cells consisting of a layer of SiQDs sandwiched between FLG and p-or n-type Si is examined by a device physics model incorporated with the optical characteristics of FLG and SiQDs. FLG/SiQDs/Si solar cells enhance short-circuit current density, because charge carriers can tunnel through the energy states in SiQDs. In addition, the quantum size effects result in a shift in the conduction and valence subband position of SiQDs, which leads to a wide band gap and consequently the improvement of open-circuit voltage for FLG/SiQDs/Si solar cells. In addition, further improvement in the performance of FLG/SiQDs/Si solar cells can be obtained by tuning the size of SiQDs and FLG properties.