• 文献标题:   ELECTRON-IMPURITY SCATTERING IN DOPED SINGLE LAYER GRAPHENE
  • 文献类型:   Article
  • 作  者:   PATEL DK, SHARMA AC, ASHRAF SSZ
  • 作者关键词:   graphene, electronimpurity scattering
  • 出版物名称:   MODERN PHYSICS LETTERS B
  • ISSN:   0217-9849
  • 通讯作者地址:   Maharaja Sayajirao Univ Baroda
  • 被引频次:   0
  • DOI:   10.1142/S0217984913500334
  • 出版年:   2013

▎ 摘  要

We calculated electron-impurity scattering rate ((h) over bar/tau) as a function of quasiparticle energy (epsilon) for doped single layer graphene (SLG), bilayer graphene (BLG) and two-dimensional electron gas (2DEG) at zero temperature. ((h) over bar/tau) of SLG has been computed analytically as well as numerically. Computed results show that (h) over bar/tau of SLG; (a) tends to zero at epsilon = 0 and, (b) it exhibits peak at approximate to 1.6 epsilon(f), where epsilon(f) is Fermi energy. Contrary to this, (h) over bar/tau of 2DEG and BLG show their maximum values at epsilon = 0 and decline thereafter on increasing epsilon to attain a minimum at around epsilon equal to Fermi energy. We thus find that (h) over bar/tau versus epsilon of SLG displays an entirely different behavior than that of BLG and 2DEG, suggesting that electron-impurity scattering process in SLG sharply differs from those in BLG and 2DEG. Further, computed (h) over bar/tau of SLG exhibits a large variation in its magnitude over the energy range of 0