▎ 摘　　要

The present paper reports on the preparation of three- and bilayer graphene and boron doped graphene defect-free large films by electrochemical synthesis in molten alkali chlorides. It is shown that the morphology and composition of the resulting graphene and boron doped graphene films with total boron concentration up to 57 at.% which can be carefully controlled by the parameters of the deposition process, i.e., boron carbide concentration, synthesis temperature, and the applied anodic current density, in particular. The Raman spectra of boron doped graphene reveal the additional characteristic boron peaks aside from the traditional graphene ones. The intensity of these boron peaks is shown to be affected by boron concentration in graphene. (C) 2015 Elsevier B.V. All rights reserved.