• 文献标题:   Tunneling Spin Injection into Single Layer Graphene
  • 文献类型:   Article
  • 作  者:   HAN W, PI K, MCCREARY KM, LI Y, WONG JJI, SWARTZ AG, KAWAKAMI RK
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:   Univ Calif Riverside
  • 被引频次:   296
  • DOI:   10.1103/PhysRevLett.105.167202
  • 出版年:   2010

▎ 摘  要

We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO2 seeded MgO barriers. A nonlocal magnetoresistance (Delta R-NL) of 130 Omega is observed at room temperature, which is the largest value observed in any material. Investigating Delta R-NL vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.