▎ 摘　　要

A two-step process using halogen based plasma etching combined with atmospheric pressure rapid thermal annealing has been used to synthesize few layer graphene films on 6H-SiC (0001) surfaces. In this process, the 6H-SiC substrates were etched under different plasma conditions to produce a carbon rich surface layer. This was followed by rapid thermal annealing in a flow of atmospheric pressure Ar to produce the graphene films. The effects of different etching conditions, heating rates, and average and maximum annealing temperatures were investigated. Changes in surface and near-surface composition after each step were characterized by x-ray photoelectron spectroscopy and overall film quality was assessed using Raman spectroscopy. Film defects associated with this synthesis method included a buffer layer between the SiC substrate and graphene as well as oxygen-based defects on the graphene surface. Electrical characterization of these films was performed using both two and four point methods. In the two point measurements, these films exhibited back-to-back Schottky behavior from which the Schottky barrier height, carrier density and mobility were determined. The four point measurements were used to determine the contact and film resistivity as well as the transfer length.