▎ 摘　　要

In this work, we present the density functional theory calculations of the effect of an oriented electric field on the electronic structure and spin-polarized transport in a one dimensional (1D) zig-zag graphene nanoribbon (ZGNR) channel placed on a wide bandgap semiconductor of the A3B5 type. Our calculations show that carrier mobility in the 1D semiconductor channel of the ZGNR/A3B5(0001) type is in the range from 1.7 x 10(4) to 30.5 x 10(4) cm(2)/Vs and can be controlled by an electric field. In particular, at the critical value of the positive potential, even though hole mobility in an one-dimensional 8-ZGNR/h-BN semiconductor channel for spin down electron subsystems is equal to zero, hole mobility can be increased to 4.1 x 10(5) cm(2)/Vs for spin up electron subsystems. We found that band gap and carrier mobility in a 1D semiconductor channel of the ZGNR/A3B5(0001) type depend strongly on an external electric field. With these extraordinary properties, ZGNR/A3B5(0001) can become a promising materials for application in nanospintronic devices. (C) 2015 AIP Publishing LLC.