• 文献标题:   One-Step Synthesis of N-Doped Graphene Quantum Dots from Chitosan as a Sole Precursor Using Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   KUMAR S, AZIZ SKT, GIRSHEVITZ O, NESSIM GD
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICAL CHEMISTRY C
  • ISSN:   1932-7447 EI 1932-7455
  • 通讯作者地址:   Bar Ilan Univ
  • 被引频次:   14
  • DOI:   10.1021/acs.jpcc.7b05494
  • 出版年:   2018

▎ 摘  要

We present a simple, environment-friendly, and fast synthesis of nitrogen-doped graphene quantum dots (N-GQDs) on copper foil by chemical vapor deposition using exclusively chitosan, a cheap and nontoxic biopolymer, as a carbon and nitrogen precursor. We characterized the synthesized N-doped graphene quantum dots using Raman spectroscopy, XPS, AFM, HRTEM, and HRSEM and found them to be in the range 10-15 nm in diameter and 2-5 nm-thick with 4.2% of maximum nitrogen content. The proposed growth mechanism process includes three key steps: (1) decomposition of chitosan into nitrogen-containing compounds, (2) adsorption of reactive species (HCN) on the copper surface, and (3) nucleation to form N-doped graphene quantum dots. The synthesized N-GQDs exhibit photoluminescence (PL) emission in the visible band region, thus making them suitable for applications in nano-optoelectronics.