▎ 摘　　要

Transparent organic field-effect transistors with solution-processed graphene source-drain and gate electrodes were fabricated on flexible substrates. Graphene electrodes were formulated by chemical and thermal reduction of solution-processed graphene oxide films. A graphene gate electrode, a gate dielectric layer, and an organic active layer were coated on a transparent flexible polyimide film. Next, graphene source-drain electrodes, which had been formed on another glass substrate, were peeled off and transferred onto the active layer using a thermal release tape. The transparent and flexible poly(3-hexylthiophene) transistor with graphene electrodes showed p-type characteristics with hole mobility of 2.3 x 10(-2) cm(2).V(-1).s(-1). (C) 2011 The Japan Society of Applied Physics