▎ 摘　　要

Heterostructures of graphene (G) or multilayer graphene (MLG) transferred on the graphene oxide (GO) printed layer are considered in the present study. Hillocks with a height of about 60-100 nm are found at the background GO relief of 10-15 nm. Graphene in these heterostructures completely follows the GO relief. The quasi-suspended layers on the hillocks are observed for MLG, and the distance between MLG and GO is estimated up to 20-40 nm. An increase in the MLG thickness is suggested to increase the distance between MLG and GO. Carrier mobility in G/GO heterostructures is found to equal 300-500 cm(2)/V s. The formation of quasi-suspended MLG/GO structures leads to an increase in the carrier mobility up to 4500 cm(2)/V s with an increase in the MLG thickness (3-8 nm). The change in the carrier mobility in MLG as a function of voltage sweep direction is also observed. The effect is supposedly connected with the ability of the quasi-suspended layer to corrugate under the gate voltage application. The capsulation of heterostructures using GO films leads to the carrier mobility degradation to 300-500 cm(2)/V s in one-four weeks. The quasi-suspended structures are promising for flexible and/or printed electronics at the use as graphene channels for sensors, detectors and other applications.