▎ 摘　　要

We developed a simple and novel method to fabricate complementary-like logic inverters based on ambipolar graphene held-effect transistors (FETs) We found that the top gate stacks (with both the metal and oxide layers) can be simply prepared with only one-step deposition process and show high capacitive efficiency By employing such a top gate as the operating terminal, the operating bias can be lowered within 2 V In addition, the complementary p- and n-type FET pairs can be also simply fulfilled through potential superposition effect from the drain bias The inverters can be operated. with up to 4-7 voltage gains, in both the first and third quadrants due to the ambipolarity of graphene FETs For the first time, a match between the input and output voltages is achieved in graphene logic devices, indicating the potential in direct cascading of multiple devices for future nanoelectronic applications