▎ 摘　　要

The epitaxial GaN submicron rods on Si(100)/SiO2/graphene were grown by metal- organic chemical vapor deposition (MOCVD) and employed as nonenzymatic amperometric glucose sensor for the first time. The results showed that the Si(100)/SiO2/grapheme/ GaN glucose sensor had high sensitivity of 57.7 mu A/cm(2)-mM, low response time of around 4.5 s, and long lifetime of over 30 days. Non- enzymatic glucose sensors based on GaN/graphene have therefore been systematically proven to be efficient and stable.