• 文献标题:   Performance enhancement of triisopropylsilylethynyl pentacene organic field effect transistors with inkjet-printed silver source/drain electrodes achieved via dispersible reduced graphene oxide
  • 文献类型:   Article
  • 作  者:   JANG J, YOON Y, JEONG H, LEE H, SONG Y, CHO K, HONG S, LEE H, LEE T
  • 作者关键词:   organic field effect transistor, triisopropylsilylethynyl tips pentacene, reduced graphene oxide, inkjet printing
  • 出版物名称:   THIN SOLID FILMS
  • ISSN:   0040-6090
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   5
  • DOI:   10.1016/j.tsf.2013.07.008
  • 出版年:   2013

▎ 摘  要

We report a performance enhancement of triisopropylsilylethynyl (TIPS) pentacene organic field effect transistors (OFETs) obtained by treating the surface of SiO2/Si substrate with dispersible reduced graphene oxide (rGO). The source and drain electrodes were patterned with inkjet-printed highly conductive silver. The sheet resistance of inkjet-patterned silver electrodes has found to be similar to 1 Omega/square, which is comparable to that of typical vacuum-evaporated silver electrodes. The electrical performance has improved by rGO treatment, with a morphology improved for the active TIPS pentacene layer. The rGO treatment increased the morphological grain size of TIPS pentacene, resulting in a decreased number of interfacial trapping sites in the carrier transport paths. The field effect mobility of the TIPS pentacene OFETs, following the rGO surface treatment, was improved from 0.082 cm(2)/V.s to 0.141 cm(2)/V.s. (C) 2013 Elsevier B.V. All rights reserved.