▎ 摘　　要

Research on graphene/hexagonal boron nitride (h-BN) heterostructures has attracted much attention for band engineering and device performance optimization of graphene. However, the growth of graphene/ h-BN heterostructure is still challenging, which usually requires high growth temperature and long growth duration. In this paper, we demonstrate graphene/h-BN heterostructures by growing graphene onto the substrates which consist of exfoliated h-BN flakes on Co thin films using molecular beam epitaxy. The heterostructure samples grown at different temperatures and growth times were characterized by Raman, optical microscopy, atomic force microscopy, microwave impedance microscopy, and scanning tunneling microscopy. It is found that the graphene/ h-BN heterostructures were formed by the formation of graphene underneath rather than on top of the h-BN flakes. The growth mechanism is discussed. Published by AIP Publishing.