• 文献标题:   Patterned graphene as source/drain electrodes for bottom-contact organic field-effect transistors
  • 文献类型:   Article
  • 作  者:   DI CA, WEI DC, YU G, LIU YQ, GUO YL, ZHU DB
  • 作者关键词:  
  • 出版物名称:   ADVANCED MATERIALS
  • ISSN:   0935-9648 EI 1521-4095
  • 通讯作者地址:   Chinese Acad Sci
  • 被引频次:   314
  • DOI:   10.1002/adma.200800150
  • 出版年:   2008

▎ 摘  要

Graphene, which is a basic building, block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.