• 文献标题:   Gate tunable nonlinear rectification effects in three-terminal graphene nanojunctions
  • 文献类型:   Article
  • 作  者:   ZHU RJ, HUANG YQ, KANG N, XU HQ
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Peking Univ
  • 被引频次:   8
  • DOI:   10.1039/c3nr06404b
  • 出版年:   2014

▎ 摘  要

We report on a study of the room-temperature nonlinear charge transport properties of three-terminal junction devices made from graphene. We demonstrate that the graphene three terminal junction devices show a rectification characteristic, namely, when voltages V-L V and V-R -V are applied to the left and the right terminal in a push-pull configuration, the voltage output from the central terminal VC is finite and is scaled approximately with V-2. The rectification coefficient can be effectively tuned by a gate voltage and shows a transport carrier polarity dependence. We further show that the nonlinear charge transport characteristics can be used to probe the electronic structure of graphene nanostructures and to study the thermoelectrical power of graphene. These results show that the graphene three-terminal junction devices could be used as novel building blocks for nanoelectronics and as novel devices for the study of the material properties of graphene on the nanoscale.