▎ 摘　　要

We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm(2)/(Vs) at 2K and up to 40 000 cm(2)/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15meV for a displacement field of 0.2 V/nm in such CVD grown BLG. Published by AIP Publishing.