▎ 摘　　要

This paper presents a new approach to study the effect of carrier generation on the current of graphene nanoribbon field effect transistors, which is normally ignored in current-voltage (I-V) modelling. Two analytical models together with a Monte Carlo approach including the edge effect scattering are used to calculate the current and net generation rate respectively. In addition, two fabricated devices with gate lengths of 20 and 30 nm are employed for verification. We showed that ignoring this effect in the modelling, results in error up to 10% for a typical 30 nm graphene field effect transistor. This approach is useful in modelling and optimization of graphene-based field effect transistors and photo sensors.