▎ 摘　　要

A new way of graphene synthesis via palladium silicidation was demonstrated. SiC and Pd layers were first deposited on sapphire wafer by sputtering. They were annealed at various temperatures between 900 degrees C and 1150 degrees C in a vacuum furnace. Pd atoms began to bond with Si atoms at the interface between SiC and Pd layers. The formation of Pd silicide was accelerated by heat treatment. Carbon atoms left via silicidation were redistributed and as a result, they formed graphene layers on the substrate. Pd silicide was evaporated off the surface above 1050 degrees C, leaving graphene layers on the substrate.