• 文献标题:   Tip-Induced Deformation of Graphene on SiO2 Assessed by Capacitance Measurement
  • 文献类型:   Article
  • 作  者:   NAITOU Y
  • 作者关键词:  
  • 出版物名称:   JAPANESE JOURNAL OF APPLIED PHYSICS
  • ISSN:   0021-4922 EI 1347-4065
  • 通讯作者地址:   Natl Inst Adv Ind Sci Technol
  • 被引频次:   2
  • DOI:   10.1143/JJAP.51.115101
  • 出版年:   2012

▎ 摘  要

Tip-induced deformation of graphene on a SiO2 substrate was probed through a combination of scanning capacitance microscopy (SCM) and dynamic force microscopy (DFM). Spectroscopic analysis revealed that the resonant frequency shift (Delta f) of the probe tip oscillation and the modulated capacitance (Delta C) simultaneously measured on graphene depend on the externally applied bias voltage while keeping the tip-sample distance constant. This finding is interpreted as a result of a local displacement of the graphene surface caused by the electrostatic force between the probe tip and graphene. The approach curve of the SCM tip toward graphene can be used to calibrate the observed Delta C spectra, quantitatively yielding an average deformation of approximately 0.31nm in trilayer graphene and 0.21 nm in single-layer graphene. (C) 2012 The Japan Society of Applied Physics