▎ 摘　　要

Low temperature pulsed laser deposited (PLD) ultrathin boron nitride (BN) on SiO2 was investigated as a dielectric for graphene electronics, and a significant enhancement in electrical transport properties of graphene/PLD BN compared to graphene/SiO2 has been observed. Graphene synthesized by chemical vapor deposition and transferred on PLD deposited and annealed BN exhibited up to three times higher field effect mobility compared to graphene on the SiO2 substrate. Graphene field effect transistor devices fabricated on 5 nm BN/SiO2 (300 nm) yielded maximum hole and electron mobility of 4980 and 4200 cm(2) /V s, respectively. In addition, significant improvement in carrier homogeneity and reduction in extrinsic doping in graphene on BN has been observed. An average Dirac point of 3.5V and residual carrier concentration of 7.65 x 10(11) cm(-2) was observed for graphene transferred on 5 nm BN at ambient condition. The overall performance improvement on PLD BN can be attributed to dielectric screening of charged impurities, similar crystal structure and phonon modes, and reduced substrate induced doping. (c) 2015 AIP Publishing LLC.