▎ 摘　　要

2D nanomaterials such as graphene and transition metal dichalcogenides have attracted great interest as future electronic materials, especially for application in next-generation displays, owing to their extraordinary electrical, mechanical, and optical properties. In order to achieve 2D material-based practical devices, it is essential to heal the graphene defects which are inevitably generated during chemical vapor deposition-based large-area synthesis and transfer process, through doping technology. In this article, a novel approach for selective defect-healing of graphene with electrodeposited gold nanoparticles is proposed, where the defect-healed graphene source/drain electrodes are integrated with p-type tungsten diselenide (WSe2) thin-film transistors (TFTs), for the first time. This proposed device shows greatly enhanced electrical characteristics (increase of carrier mobility about approximate to 230.8%) by selective defect-healing of graphene, and the performance improvement mechanism is systematically investigated in terms of conductivity and Schottky barrier engineering of graphene/WSe2 interface. Also, a long-term stability of defect-healed graphene electrode is achieved over a long period of a month, which is enabled by a polymer-based passivation layer that maintains the doping effects of defect-engineered graphene. The authors' findings therefore provide a new strategy for developing graphene electrode-based high-performance TFTs, and reveal the enormous potential of graphene as an innovative conductor for prospective displays.