▎ 摘　　要

A novel route to thin-film fabrication of graphene oxide (GO) is presented using a well-known technique, i.e., electrospray deposition. For deposition of the graphene-oxide thin film, grapheneoxide ink containing 0.025 wt% graphene oxide flowing through a metal capillary was subjected to a static electric field in order to generate atomized droplets, thereby depositing a uniform thin film of graphene oxide on an indium-tin-oxide coated polyethylene terephthalate substrate. The quality of the layer was characterized by analyzing the surface morphology and the thickness, and the electrical measurements on the single film were performed. In order to study the resistive switching behavior of GO, a prototype GO-based resistive switching device having an active area of 0.026 mm(2) was developed and was analyzed by current voltage measurements. The IV characteristics of the device successfully showed a typical non-volatile resistive switching behavior for a GO layer having the retention times of similar to 10(3) s, thus highlighting the electrospray deposition technology as a reliable candidate for the fabrication of GO layers.