▎ 摘　　要

Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (V-g). The ideality factor of the graphene/ZnO nanowire Schottky diode is similar to 1.7, and the Schottky barrier height is similar to 0.28 eV without external V-g. The Schottky barrier height is sensitive to V-g due to the variation of Fermi level of graphene. The barrier height increases quickly with sweeping V-g towards the negative value, while decreases slowly towards the positive V-g. Our results are helpful to understand the fundamental mechanism of the electric transport in graphene-semiconductor Schottky diode.