▎ 摘　　要

We demonstrated experimentally that an approximate 15% reduction in wafer bowing was achieved by spray-coating of graphene oxide (GO) with an O-ring pattern on the sapphire substrate before the metal organic chemical vapor deposition-grown AlN template. At the 1350 degrees C growth temperature of AIN, GO was thermally reduced to graphene, which is favorable to alleviate thermal compressive stress between the AIN template and sapphire substrate during the cooling process due to the natural high thermal conductivity of graphene. Consequently, the GO O-ring pattern can play an important role in dramatically reduce cracks, edge delamination and threading dislocation density of AIN templates grown on sapphire substrates. (C) 2015 Elsevier B.V. All rights reserved.