▎ 摘　　要

We demonstrate the fabrication of reduced graphene oxide (RGO) Schottky diodes via dielectrophoretic (DEP) assembly of RGO between two dissimilar metal contacts. Titanium (Ti) was used to make a Schottky contact, while palladium (Pd) was used to make an Ohmic contact. From the current-voltage characteristics, we obtain rectifying behavior with a rectification ratio of up to 600. The ideality factor was high (4.9), possibly due to the presence of a large number of defects in the RGO sheets. The forward biased turn-on voltage was 1V, whereas the reverse biased breakdown voltage was -3.1 V, which improved further upon mild annealing at 200 degrees C and can be attributed to an increase in the work function of RGO due to annealing.