▎ 摘　　要

Development of novel electronic devices is an area of active research which reveals the potential of organic nano-materials towards efficient nano-devices application. In this letter, we have investigated the electronic transport properties of nitrogen (N) doped disconnected zigzag graphene nanoribbons (ZGNR). Six different configurations viz. N1, N2, N3, N4, N5 and N6 were studied to reveal the effect of N-impurity on tunnelling dependent electron transport. It is predicted that the magnitude of current through these disconnected ZGNR devices is a function of tunnelling width, however, the qualitative behavior is quite similar. Further, a negative differential resistance (NDR) was observed for pristine nanoribbons which revokes upon N doping except for N3 configuration. The magnitude of tunnelling current is governed by the position of N impurities and can be further enhanced via selective doping of N atoms in the disconnected edges of ZGNR. Moreover, while operating in low bias regime (below 0.5 V), all the considered structures exhibit linear I-V characteristics. Present findings may find applications in upcoming organic devices working on tunnelling phenomena.