▎ 摘　　要

In the paper, the high performance silicon ring-resonator based intensity modulator is proposed which exhibits modulation based on the extent of the covering of the ring waveguide with graphene, and by electrical tuning of the chemical potential of the graphene. The deviation in the refractive index profile inside the graphene is responsible for modulation. The Q-factor of 900 throughout the entire C and L band gap is obtained. The high sensitivity and FSR of 0.83 nm/rad and 25 nm with switching rate of 10 dB/V is observed. The modulation efficiency of 100% is obtained at an angle of 4.5 rad.