▎ 摘　　要

We report the synthesis of high-quality graphene films on Ni foils using a cold-wall reactor by rapid thermal chemical vapor deposition (CVD). The graphene films were produced by shortening the growth time to 10 s, suggesting that a direct growth mechanism may play a larger role rather than a precipitation mechanism. A lower H-2 flow rate is favorable for the growth of high-quality graphene films. The graphene film prepared without the presence of H-20 has a sheet resistance as low as similar to 367 ohm/sq coupled with 97.3% optical transmittance at 550 nm wavelength, which is much better than for those grown by hot-wall CVD systems. These data suggest that the structural and electrical characteristics of these graphene films are comparable to those prepared by CVD on Cu. (C) 2011 Elsevier Ltd. All rights reserved.