▎ 摘　　要

In this letter, we report on inverters made from graphene field effect transistors with channels of artificially stacked bilayer graphene (ASBLG). The materials were grown by scalable chemical vapor deposition. The devices demonstrate enhanced voltage gain (Av) figures at relatively lower input voltages when compared with devices with single layer graphene channels. A gain value as high as 7.134 is obtained using ASBLG-based inverters without any applied back-gate voltage. The improved performance is discussed in terms of transconductance and contact resistance. Our results suggest that ASBLG-based inverters may be useful for future RF circuit applications.