▎ 摘　　要

This article presents the recent development of frequency-conversion mixer circuits employing graphene-based electron devices targeting microwave and millimeter-wave applications. Mixer circuits that have been reported using graphene field-effect transistors and graphene diodes are investigated. The concept of operation of these circuits utilizing the unique properties of graphene as well as their performance metrics are discussed in comparison with their counterparts realized based on conventional semiconductor technologies. In addition, the demanded improvement in the properties of the graphene electron devices for better circuit performance is highlighted.