• 文献标题:   The Influence of Strong Electron and Hole Doping on the Raman Intensity of Chemical Vapor-Deposition Graphene
  • 文献类型:   Article
  • 作  者:   KALBAC M, REINACECCO A, FARHAT H, KONG J, KAVAN L, DRESSELHAUS MS
  • 作者关键词:   graphene, raman spectroscopy, doping, electrochemical gating, spectroelectrochemistry
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851
  • 通讯作者地址:   Acad Sci Czech Republic
  • 被引频次:   166
  • DOI:   10.1021/nn1010914
  • 出版年:   2010

▎ 摘  要

Electrochemical charging has been applied to study the influence of doping on the intensity of the various Raman features observed in chemical vapor-deposition-grown graphene. Three different laser excitation energies have been used to probe the influence of the excitation energy on the behavior of both the G and G' modes regarding their dependence on doping. The intensities of both the G and G' modes exhibit a significant but different dependence on doping. While the intensity of the G' band monotonically decreases with Increasing magnitude of the electrode potential (positive or negative), for the G band a more complex behavior has been found. The striking feature is an increase of the Raman intensity of the G mode at a high value of the positive electrode potential. Furthermore, the observed increase of the Raman intensity of the G mode is found to be a function of laser excitation energy.