▎ 摘　　要

We discuss a low-energy radio frequency (RE) detector that integrates monolayer graphene on complementary metal oxide semiconductor (CMOS) technology. A CMOS test integrated circuit fabricated with an Ultra-Low Power (ULP) Metal Oxide Semiconductor Implementation Service Taiwan Semiconductor Manufacturing Company (MOSIS TSMC) 0.25 mu m process was developed for graphene-based on-chip RE detection. An exfoliation process was used to overlay a graphene area of less than 0.005 mm(2) on metal rails that detect minute changes in charge accumulation across a graphene surface. A RE printed circuit board (PCB) was designed CO minimize parasitic elements that may affect RE measurements, and performance characteristics were quantified by an output voltage amplified by a CMOS differential amplifier. Results demonstrated that the graphene device produced potential differences when exposed to RE radiation and exhibited a minimal power consumption of only 63.6 mW. The performance of the graphene device will help realize low-frequency RF detection within a small package.