• 文献标题:   Topological and Stacked Flat Bands in Bilayer Graphene with a Superlattice Potential
  • 文献类型:   Article
  • 作  者:   GHORASHI SAA, DUNBRACK A, ABOUELKOMSAN A, SUN JC, DU X, CANO J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW LETTERS
  • ISSN:   0031-9007 EI 1079-7114
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1103/PhysRevLett.130.196201
  • 出版年:   2023

▎ 摘  要

We show that bilayer graphene in the presence of a 2D superlattice potential provides a highly tunable setup that can realize a variety of flat band phenomena. We focus on two regimes: (i) topological flat bands with nonzero Chern numbers, C, including bands with higher Chern numbers ICI > 1 and (ii) an unprecedented phase consisting of a stack of nearly perfect flat bands with C = 0. For realistic values of the potential and superlattice periodicity, this stack can span nearly 100 meV, encompassing nearly all of the low-energy spectrum. We further show that in the topological regime, the topological flat band has a favorable band geometry for realizing a fractional Chern insulator (FCI) and use exact diagonalization to show that the FCI is in fact the ground state at 1/3 filling. Our results provide a realistic guide for future experiments to realize a new platform for flat band phenomena.