• 文献标题:   The energies of the substitutional impurities in graphene
  • 文献类型:   Article
  • 作  者:   SIERANSKI K, SZATKOWSKI J
  • 作者关键词:   defect, graphene, green s function, tightbinding model
  • 出版物名称:   PHYSICA STATUS SOLIDI BBASIC SOLID STATE PHYSICS
  • ISSN:   0370-1972 EI 1521-3951
  • 通讯作者地址:   Wroclaw Univ Technol
  • 被引频次:   3
  • DOI:   10.1002/pssb.201248312
  • 出版年:   2013

▎ 摘  要

The properties of the substitutional impurities of the second period of the periodic table incorporated into graphene were investigated. The Green's-functions framework and the tight-binding method without the effect of the lattice distortion were used. We discuss the possibility of the existence of well-defined resonant states in the valence band or the conduction band in the vicinity of the Dirac point. We conclude that in the vicinity of the Dirac point there was a possibility of a coincidence of the Fermi energy levels with impurity resonances (i.e., the Fermi level is pinned to the impurity resonance level.)