• 文献标题:   Pure thiophene-sulfur doped reduced graphene oxide: synthesis, structure, and electrical properties
  • 文献类型:   Article
  • 作  者:   WANG ZG, LI PJ, CHEN YF, HE JR, ZHANG WL, SCHMIDT OG, LI YR
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   Univ Elect Sci Technol China
  • 被引频次:   76
  • DOI:   10.1039/c3nr05061k
  • 出版年:   2014

▎ 摘  要

Here we propose, for the first time, a new and green ethanol-thermal reaction method to synthesize high-quality and pure thiophene-sulfur doped reduced graphene oxide (rGO), which establishes an excellent platform for studying sulfur (S) doping effects on the physical/chemical properties of this material. We have quantitatively demonstrated that the conductivity enhancement of thiophene-S doped rGO is not only caused by the more effective reduction induced by S doping, but also by the doped S atoms, themselves. Furthermore, we demonstrate that the S doping is more effective in enhancing conductivity of rGO than nitrogen (N) doping due to its stronger electron donor ability. Finally, the dye-sensitized solar cell (DSCC) employing the S-doped rGO/TiO2 photoanode exhibits much better performance than undoped rGO/TiO2, N-doped rGO/TiO2 and TiO2 photoanodes. It therefore seems promising for thiophene-S doped rGO to be widely used in electronic and optoelectronic devices.