• 文献标题:   Passivation of Metal Surface States: Microscopic Origin for Uniform Mono layer Graphene by Low Temperature Chemical Vapor Deposition
  • 文献类型:   Article
  • 作  者:   JEON I, YANG H, LEE SH, HEO J, SEO DH, SHIN J, CHUNG UI, KIM ZG, CHUNG HJ, SEO S
  • 作者关键词:   graphene, copper, scanning tunneling microscopy, density functional theory, chemical vapor deposition
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Samsung Adv Inst Technol
  • 被引频次:   56
  • DOI:   10.1021/nn102916c
  • 出版年:   2011

▎ 摘  要

Scanning tunneling microscopy (STM) and density functional theory (DFT) calculations were used to Investigate the surface morphology and electronic structure of graphene synthesized on Cu by low temperature chemical vapor deposition (CVD). Periodic line patterns originating from the arrangements of carbon atoms on the Cu surface passivate the Interaction between metal substrate and graphene, resulting in flawless inherent graphene band structure in pristine graphene/Cu. The effective elimination of metal surface states by the passivation Is expected to contribute to the growth of monolayer graphene on Cu, which yields highly enhanced uniformity on the wafer scale, making progress toward the commercial application of graphene.