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  • 文献标题:   Synergic magnetoresistance of graphene foam and topological insulators
  • 文献类型:   Article
  • 作　　者:   XU ZP, SAGAR RUR, GALLUZZI M, ZHANG M, LIANG TX
  • 作者关键词:   chemical vapor deposition, carbon material, bismuth oxyselenium, bismuth selenium
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1016/j.matlet.2022.131735 EA JAN 2022
  • 出版年:   2022

▎ 摘　　要

Herein, synergetic magnetoresiatnce of topological insulators such as Bismuth Selenium (Bi2Se3) and Bismuth Oxygen Sileneium (Bi2O2Se), and GF is discussed in detail. Both, Bi2Se3-GF and Bi2O2Se-GF, are fabricated in Chemical Vapor Deposition (CVD) under argon and air atmosphere, respectively. The highest positive MR -250% is detected under a magnetic field -5 T and temperature -5 K in Bi2Se3-GF sample compared to Bi2O2Se-GF. The presence of oxygen in Bi2Se3 to form Bi2O2Se significantly reduced the magnitude of MR and linear MR might be due to the mobility fluctuation.